| 摘要 |
PURPOSE:To obtain the FET of small scattering in threshold value by a method wherein unnecessary micro defects are absorbed by utilizing strain fields formed in source and drain regions. CONSTITUTION:A resist pattern 22 having apertures in the source and drain regions is formed on a semi-insulation GaAs substrate 21, and Kr ions and successively Si ions are implanted. As a result, Si ion implanted layers 23 and 24 and Kr ion implanted layers 25 and 26 of large damage immediately thereunder are formed. Thereafter, the micro defects of the channel region are absorbed by the strain fields of the layers 25 and 26 on heat treatment. Next, an another resist pattern 22' is formed, and an ion implanted layer 27 serving as the active layer is formed by Si ion implantation. Then, the implanted impurity is activated by heat treatment, and an n<+> source 23', an n<+> drain 24', and an n<-> active layer 27' are formed. Afterwards, source and drain electrodes 28 and 29 and a gate electrode 30 are formed. |
