| 摘要 |
PURPOSE:To obtain semiconductor crystal having improved characteristics while suppressing diffusion of element of group V, by growing crystal on a substrate of compound semiconductor of group III-V by vapor phase growth method in such a way that a substrate temperature, and a molar ratio of a feed amount of a gas containing Zn to a feed amount of a gas containing S or S and Se are set in specific ranges. CONSTITUTION:In growing ZnS or ZnSxSe1-x (0<x<1) crystal containing donor impurities on a substrate of compound semiconductor of group III-V by vapor phase growth method, a substrate temperature is set at 200-500 deg.C, and a molar ratio of a feed amount of a raw material gas containing Zn to a feed amount of a raw material gas containing S or S and Se is set at 1-50. When the substrate temperature exceeds 500 deg.C, emission intensity at 560nm is abruptly increased, and when the substrate temperature is too low, the crystal properties of the prepared ZnS become poor. Consequently, >=200 deg.C substrate temperature is practically required. |
