| 摘要 |
PURPOSE:To obtain silicon nitride-base cermet having little brittleness unlike silicon nitride-base ceramics by forming the nitride and silicide of a group IVa transition metal on the outsides of ceramic grains contg. both nitrogen and silicon and by forming the grain boundaries with a ductile metal. CONSTITUTION:The nitride of a group IVa transition metal and the silicide of a IVa group transition metal are formed on the outsides of ceramic grains contg. essentially both nitrogen and silicon, and the grain boundaries are formed with a ductile metal to obtain silicon nitride-base cermet. It is desirable to use silicon nitride-base ceramic grains as the ceramic grains, titanium nitride as the nitride, titanium silicide as the silicide and Cu or a Cu alloy as the ductile metal.
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