| 摘要 |
A susceptor for use in an in-line or continuous deposition of a film on a silicon wafer by a CVD process, which comprises Si-SiC ceramic containing 7% to 25% by weight of metallic silicon having a high purity. The susceptor has enhanced mechanical strength and dimensional stability and can normally be used repeatedly a large number of times. Further, by using such a susceptor a uniform film can be deposited on the silicon wafer by the CVD process, and a silicon wafer can be coated with a film having desired electrical properties by the CVD process without contaminating the silicon wafer. |
