| 摘要 |
PURPOSE:To control change in heat environment in a furnace caused by an amount of compound semiconductor crystal pulled up, by controlling it by a heating member to raise and to reduce temperature at a solid-liquid interface part between a material to be pulled up and melt, following displacement resulting from pulling. CONSTITUTION:The main pulling shaft 11 passing through the top of the pulling container 10 and the concentric liftable subsidiary shaft 12 to be brought into contact with the main pulling shaft 11 at the piercing part are set, and the heating member 13 is laid at the bottom of the subsidiary pulling shaft in such a way that the heating members surrounds the main pulling shaft 11. The heating member 13 consists of cylindrical carbon provided with the high-frequency heating coil 13a at the outer periphery, and it is formed so that its height is 1.5 as long as the expected length of single crystal, its inner diameter is larger than that of the single crystal, and its outer diameter is smaller than the inner diameter of the quartz crucible 7. In pulling up the single crystal of a compound semiconductor by the heating element 13, the temperature at the solid-liquid interface part of the material 5 to be pulled up and the melt 1 is controlled. |
