SEMICONDUCTOR DEVICE HAVING A LOW PARASITIVE CAPACITANCE WITH BEAM-LEAD-TYPE EXTERNAL CONNECTORS

摘要

1. Semiconductor device having a low parasitic capacity and provided with external connections derived by means of metallic beams (3, 4) fixed in flat manner on the surface of the semiconductor chip and at least one of which (4), in its portion exterior to the contact ensured thereby at the surface of the chip, is electrically insulated and mechanically supported by an insulating material filling a groove (7) extending from the surface of the chip to the substrate (8) of the semiconductor device, this semiconductor device being characterized in that its substrate (8) is of an electrically insulating material (rho > 4000 OMEGA . cm) and in that a semiconductor layer (9) comprised between the insulating substrate (8) and the superficial layers (2, 5 or 10) forming at least one junction of the semiconductor device has a thickness which is small in comparison to the thickness of the filling material of the groove (7).