发明名称 |
Lead materials for semiconductor devices. |
摘要 |
<p>A lead material for semiconductor devices comprising from 0.4 to 4.0 wt% of Ni, from 0.1 to 1.0 wt% of Si, from 0.05 to 1.0 wt% of Zn, from 0.01 to 1.0 wt% of Mn, from 0.001 to less than 0.01 wt% of Mg, from 0.001 to less than 0.01 wt% of Cr, up to 0.003 wt% of S, and the balance of Cu and inevitable impurities. The material may further comprise up to 5 ppm of hydrogen and up to 5 ppm of oxygen.</p> |
申请公布号 |
EP0158509(A2) |
申请公布日期 |
1985.10.16 |
申请号 |
EP19850302357 |
申请日期 |
1985.04.03 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO ALSO KNOWN AS KOBE STEEL LTD. |
发明人 |
MIYAFUJI, MOTOHISA;MATSUI, TAKASHI;HARADA, HIDEKAZU |
分类号 |
C22C9/00;C22C9/06;H01L23/00;H01L23/48;H01L23/492;(IPC1-7):H01L23/48 |
主分类号 |
C22C9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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