Semiconductor device comprising insulated gate field effect transistors.

摘要

A semiconductor device comprising insulated gate field effect transistors, with which logic gate circuits having a satisfactory switching speed and a high packing density can be realized. The logic gate circuits are composed of transistor structures having a common source zone (22), which each comprise a gate (33), a second semiconductor zone (25) and one or more drain zones (28) and are manufactured in DMOS technology. The dates (33) are strip-shaped or have at least a strip-shaped part. The gate circuits can be integrated in a simple manner with one or more high-voltage transistors manufactured in DMOS technology.