Semiconductor device having a drive circuit element and an output transistor.

摘要

There is a semiconductor device in which an n-type layer (12) formed on a p'-type substrate (10) is divided into first and second device forming regions (12-1, 12-2) by an isolation region (16) and drive circuit devices (TR2, TR3) and an output circuit device are respectively formed in these first and second device forming regions (12-1, 12-2). The output circuit device (TR1) is a conductivity modulated MOS transistor having the p+-type substrate (10) as a drain and the second device forming region (12-2) as a high resistance region whose conductivity is modulated.