发明名称 |
UN DISPOSITIVO SEMICONDUCTOR PARA PRODUCIR RADIACION ELECTROMAGNETICA EN LA ZONA ACTIVA SEMICONDUCTORA EN FORMA DE CAPA |
摘要 |
<p>In a semiconductor laser with iso-electronic doping or with a quantum-well structure, efficiency is considerably increased by lateral injection. For this purpose, the active region is composed of active layers and barrier layers which are laterally bounded by semiconductor zones preferably degenerate, which inject charge carriers in the longitudinal direction of the active layers. The population inversion in the active layers is further increased in that superinjection occurs at the transition with the degenerate zones.</p> |
申请公布号 |
ES537758(D0) |
申请公布日期 |
1985.10.16 |
申请号 |
ES19580005377 |
申请日期 |
1984.11.19 |
申请人 |
N.V. PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
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分类号 |
H01S5/00;H01S5/042;H01S5/227;H01S5/34;H01S5/40;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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