| 摘要 |
PURPOSE:To form uniformly a dense thin film having high quality over a large area in formation of the thin film in which sputtering is utilized by controlling the flow rate of supply gas, the atomic weight of the gas, the pressure in a vessel, the atomic weight of a target and the space between the target and a substrate by the specific equations. CONSTITUTION:A target 2 and a substrate 3 are disposed to face each other in a vessel 1 having a gas supply line 5 and discharge line 6 and a target 2 is sputtered by the gaseous ions formed by glow discharge of supply gas to form a prescribed thin film on the substrate 3. The flow rate of the supply gas, designated as Q(SCCM), the atomic weight of said gas as MG, the pressure in the vessel 1 as P(Torr), the atomic weight of the target 2 as Mr and the space between the target 2 and the substrate 3 as d(cm) are so controlled as to attain 0.5X10<-3=P<=20X10<-3>, P/Q<=2X10<-3>, 0.001<=Pd, Pd<=(Ma+Mr)<2>/20MaMr. |
