| 摘要 |
PURPOSE:To obtain high sensitivity, superior resolution, and dry etching resistance by using a chlorinated polymethylstyrene having a specified chlorination rate and a specified mol.wt. range as a resist material. CONSTITUTION:Chlorinated polymethylstyrene (CPMSR) having 90-120% chlorination rate and 400,000-600,000mol.wt. range is used as an X-ray sensitive resist material used for forming a pattern by selectively irradiating PdLalpha rays and developing it. Sensitivity can be enhanced such CPMSR has a high content of C having high absorption coefft. of PdLalpha rays, and high contrast can be attained by selecting said range of chlorination rate. Uniform resist film thickness can be obtained by using said polymer of said mol.wt. range. As a result, the obtained X-ray resist has high sensitivity to PdAalpha rays, a gamma value of >=1.0, and superior resolution and dry etching resistance, and it permits microfabrication in the manufacture process of semiconductors in the submicron region. |
