发明名称 Sputtering apparatus
摘要 A magnetron type sputter apparatus utilizing an orthogonal electromagnetic field, with the apparatus being adapted for forming an electrode wiring of a semiconductor device. The apparatus includes a target having a shape adapted to prevent a bumping of a target material from an end part of the target so that a temperature rise and damage of the semiconductor device attributed to electron bombardment can be prevented and the lifetime of the target can be prolonged.
申请公布号 US4547279(A) 申请公布日期 1985.10.15
申请号 US19840673928 申请日期 1984.11.21
申请人 HITACHI, LTD. 发明人 KIYOTA, HIDEHARU;HORIUCHI, MITSUAKI
分类号 C23C14/36;C23C14/35;H01J37/34;H01L21/285;H01L21/3205;(IPC1-7):C23C15/00 主分类号 C23C14/36
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