发明名称 |
Sputtering apparatus |
摘要 |
A magnetron type sputter apparatus utilizing an orthogonal electromagnetic field, with the apparatus being adapted for forming an electrode wiring of a semiconductor device. The apparatus includes a target having a shape adapted to prevent a bumping of a target material from an end part of the target so that a temperature rise and damage of the semiconductor device attributed to electron bombardment can be prevented and the lifetime of the target can be prolonged.
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申请公布号 |
US4547279(A) |
申请公布日期 |
1985.10.15 |
申请号 |
US19840673928 |
申请日期 |
1984.11.21 |
申请人 |
HITACHI, LTD. |
发明人 |
KIYOTA, HIDEHARU;HORIUCHI, MITSUAKI |
分类号 |
C23C14/36;C23C14/35;H01J37/34;H01L21/285;H01L21/3205;(IPC1-7):C23C15/00 |
主分类号 |
C23C14/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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