| 摘要 |
PURPOSE:To increase and stabilize the electrostatic chargeability of a photosensitive body and to improve the optical fatigue characteristics by incorporating a specified amount of O and a small amount of a IIIa group element into the charge transferring layer contg. a-SiC as a base formed under the charge generating layer contg. a-Si as a base and by forming a blocking layer contg. a large amount of a IIIa group element under the charge transferring layer. CONSTITUTION:A charge transferring layer 42 of amorphous hydrogenated and/ or fluorinated silicon carbide is formed under a charge generating layer 43 of amorphous hydrogenated and/or fluorinated silicon, and 50-500ppm O (Si+C= 100atom%) and a small amount of a IIIa group element are incorporated into the layer 42. A charge blocking layer 44 of amorphous hydrogenated and/or fluorinated silicon carbide contg. a large amount of a IIIa group element is formed under the layer 42. By incorporating O into the layer 42, the dark resistance is increased without reducing the charge transferring power, the temp. dependency of the dark resistance is controlled, and high electrostatic charge potential retentivity is provided. Since the implantation of electrons from a substrate 41 is hindered by forming the blocking layer 44 under the layer 42, a photosensitive body suitable for positive electrostatic charge is obtd. |
