| 摘要 |
PURPOSE:To stabilize a wiring resistance value by preventing a deposition of Si deposited grains extending over the whole of wiring width and the thickness direction during the heat treatment. CONSTITUTION:A wiring 18 is formed in three layer structure by Al wiring layers 19, 20 as upper and lower layers and a different-kind metallic layer 21 shaped to an intermediate section in the thickness direction of the wiring. A solid solution limit or more and 2wt% or more of Si is included in Al in the Al wiring layers 19, 20, and the Al wiring layers are shaped through a sputtering method or an evaporation method. Since the different-kind metallic layer 21 is formed between the wiring layers 19, 20, the increase of the grain size of Al grains and Si deposited grains in each Al wiring layer 19, 20 is regulated in the thickness direction, thus preventing the generation of bump structure in the whole thickness direction of the wiring. |
