| 摘要 |
PURPOSE:To enable the formation of a resist pattern having an under-cut profile or a profile as required for a lift-off process or the like with a reduced dose of irradiation, by introducing a particular process for cooling P type resist. CONSTITUTION:A monopolymer consisting of vinyl monomers represented by the formulas 1-3 or a copolymer having said monomers as its main polymer ingredient is used as P type resist for ionizing radiation or for far ultraviolet radiation. R1 should be a methyl radical and R2 should be an alkyl, allyl or alkyl halide radical. A resist film 1 is formed on a substrate 2. After prebaked, the resist is cooled in two steps: in the first step, only the lower surface of the resist is cooled while the temperature of the upper surface being maintained, and in the second step, the whole resist 1 is cooled slowly or allowed to cool spontaneously. According to this method, the lower part of the resist 1 has the larger solubility to a developing solution, and therefore an undercut resist pattern required for a process such as a lift-off process can be obtained with reduced dose of irradiation. |
