| 摘要 |
PURPOSE:To improve the remedy rate of defective elements and also to improve the read speed by providing a discharge MOSFET to the remotest end parted remotest from a driver of a word line and turning on it just before of the selection of the word line so as to eliminate the adverse effect due to a memory cell connected to a defective word line. CONSTITUTION:Drains of discharge MOSFETQ01-Q0n, Q11-Q1n and Qs1 and Qs2 are connected respectively to the start and end of the word line Ws in a sparememory row 1s and word lines W1, W2...Wn in a memory array 1, that is, a word line end close to an X decoder 3a and a word line at remote side. Sources of discharge MOSFETQ01-Q0n, Q11-Q1n and Qs1, Qa2 are connected to a ground point of the circuit, a detection signal phip outputted from an address detection circuit 8 is impressed to the gate of the MOSFETs and they are turned on temporarily. |
