| 摘要 |
PURPOSE:To improve parallelism and uniformity of both surfaces of a diaphragm part, and to enable to perform an industrial mass production by a method wherein the control of an etching to be performed when a diaphragm is formed is conducted automatically, and the diaphragm is formed by recrystallization of an amorphous semiconductor or a polycrystallized semiconductor. CONSTITUTION:This converter consists of a diaphragm part 4 and a diaphragm supporting part 7 with which the diaphragm part 4 is supported. A piezoelectric conversion element 5 is formed in one body with the diaphragms part 4, and said piezoelectric conversion element 5 is electrically insulation-isolated. Also, the diaphragms supporting part 7 is formed as a remaining part of etching of a single crystal silicon substrate. To be more precise, as the progress of etching on the part which is masked by the first stopping layer 2 stops at the first stopping layer 2, the remaining part is formed as the diaphragm supporting part 7. The etching makes progress as far as to the second stopping layer 3 on the parts 8 and 80 which are not masked by the first stopping layer 2, and a diaphragm 4 is formed. The etching part 8 is turned to a scribe line to be used for separation of each chip. |
