| 摘要 |
PURPOSE:To enhance the dielectric constant of an insulating film, to reduce the area of an electric capacitor body, and to enable to form a memory device in high integration by a method wherein the insulating film to act as the capacitor body of an electric capacitance part is constructed as a multilayer film consisting of an Si3N4 film or a Ta2O5 film and an SiO2 film. CONSTITUTION:An MOSFET consisting of a first field SiO2 film 2, a gate SiO2 film 3, source and drain diffusion layers 4, 5, and a gate electrode 6 is constructed on the surface of an Si substrate 1. A first insulating film 7 consisting of an SiO2 film between them, a second insulating film 10 consisting of an Si3N4 film or a Ta2O5 film and an SiO2 film is formed on the first electrode 8, etc. thereof interposing a second field SiO2 film between them, and a second electrode 11 is formed on the second insulating film 10 thereof. |
