发明名称 LEAD FRAME FOR SEMICONDUCTOR
摘要 PURPOSE:To enhance reliability of an iron lead frame by a method wherein an alloy metallic deposit mainly consisting of copper and zinc or copper and tin is provided on the surface of a metallic body consisting of an iron alloy or iron. CONSTITUTION:A lead frame 1 for semiconductor is constructed of an inner lead part 6 and an outer lead part 7. A Cu-Zn alloy metallic deposit 2 is provided at 3mum thickness to the lead frame 1 consisting of the 3% Cr-Fe alloy, and a partial silver metallic deposit 3 is provided at 3mum thickness to the inner lead part 6 containing a pellet fitting part (a tab part) 5. By processing in such a way, adherence of the oxide film of a copper metallic deposit, which is a primary factor to deteriorate resin sealing, can be improved remarkably even when an iron lead frame is used.
申请公布号 JPS60201651(A) 申请公布日期 1985.10.12
申请号 JP19840058898 申请日期 1984.03.26
申请人 HITACHI DENSEN KK;HITACHI SEISAKUSHO KK 发明人 YOSHIOKA OSAMU;YAMAGISHI RIYOUZOU;WAKASHIMA YOSHIAKI
分类号 H01L23/50;H01L23/495 主分类号 H01L23/50
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