| 摘要 |
PURPOSE:To obtain a semiconductor integrated circuit having a differential amplifier including very small offset by disposing the first transistor and the second resistor in the vicinity, and approaching the second transistor and the first resistor, thereby alleviating the restriction at the designing time of the differential amplifier. CONSTITUTION:The first resistor 12 having entirely the same density distribution as an emitter region 6b and made of an N<+> type resistance region 6c diffused simulteneously from an emitter region 6b in an insular region near the first transistor 10, the second resistor 13 similarly having the same shape and construction as those of the resistance region 6c of the first resistor 12 near the second transistor are provided, and one ends of the emitter of the transistor 10 and the resistor 13, and one ends of the emitter of the transistor 11 and the resistor 12 are electrically connected by electrode metals 7. The other ends of the resistors 12, 13 are connected by the metals 7 and to a current source. |
