| 摘要 |
PURPOSE:To eliminate any defects in case of implanting a lot of impurity by a method wherein an impurity implanted in a compound semiconductor through the intermediary of a mask as well as another impurity correcting grid defect during annealing process are implanted in an insulating film utilized as a protective film during annealing process down to the depth not reaching the surface of compound semiconductor. CONSTITUTION:When overall surface of an insulating film 2 is irradiated by impurity ion 4 after providing the insulating film 2 with a recession by etching process, the impurity ion 4 may be implanted in the part of semiconductor substrate 1 only below the recession forming an implanted region 5. Next after ion implanting e.g. As 6 with an energy not reaching the GaAs substrate 1, the GaAs substrate 1 is annealed for 10- 30min at the temperature of e.g. 800-850 deg.C utilizing the insulating film 2 as a protective film. Through these procedures, As dissociated as gas at the high temperature during annealing process may be supplemented from the insulating film 2 to eliminate any defect due to dissociation. Moreover, any grid defect caused in case a lot of impurity is implanted in the semiconductor 1 may be corrected by means of diffusion the impurity 6 implanted in the insulating film 2 only in the semiconductor substrate 1 during annealing process. |
