| 摘要 |
PURPOSE:To provide a method for transferring a large-size and high-resolution chip pattern by a method wherein the chip pattern is divided into several portions and each of the resultant patterns is exposed to light one after the other. CONSTITUTION:An aperture 9 is provided to occupy, for example, one fourth of a chip pattern 12. The aperture 9 covers an upper, left-hand area 12A, and alignment marks 13a, 13b. A support stage 4 with a wafer supporting table is adjusted so that the center of a first opening area 12A may coincide with an optical axis, that a first area 14A to be exposed may face the optical axis directly. An alignment unit 11 is used to have the alignment marks 13a, 13b meet 15a, 15b, respectively. When exposure is effected under these conditions, the area 12A may be thrown upon the area 14A to be exposed. The same procedure is followed for each of the other areas 12B, 12C, 12D so that all the areas belonging to the chip pattern 12 may be thrown upon the pattern 14. By this, a large-size, high-density chip with very fine features may be transferred. |
