| 摘要 |
PURPOSE:To improve the withstand voltage of a semiconductor device of the structure coated with a chip by forming a groove along a chip securing region on the main surface of a supporting plate. CONSTITUTION:A groove 15 formed along the edge of a securing region of a chip 3 is formed on the main surface of a header 1. The groove 15 coincides at the inner peripheral edge with the edge of a securing region of the chip 3. The depth of the groove 15 may be in the same degree as or shallower than the width of the groove. The sectional size of the groove 15 is decided in coincidence with the amount of resin flowed and coated on the chip. Since a chip securing region surrounded by the groove 15 coincides with the size of the chip, the chip 3 automatically moves so that the center of the chip 3 coincides with the center of the chip securing area due to the surface tension of melted solder 2, is secured in the state, and enhanced in the securing accuracy of the chip. Therefore, the positioning work for the chip in the following assembling steps is facilitated, and the productivity in the manufacture of the transistor can be improved. |
