| 摘要 |
PURPOSE:To remove the influence of ambient temperature by calculating pressure to be measured which operates on a pressure receiving diaphragm on the basis of resistance values of gauge resistances provided to the pressure receiving diaphragm and a diaphragm for compensation. CONSTITUTION:The circular pressure receiving diaphragm is formed of a single- crystal semiconductor substrate 10 of silicon, etc., by anisotropic etching and the diaphragm 12 for compensation which has a rod-shaped projection part 12a in the center is also formed by anisotropic etching. A slight initial step delta is provided between the projection part 12a of the diaphragm 12 for compensation and a fixation part 13. Gauge resistances 21 and 22 which have lengthwise directions at right angles are formed closely on the surface of the diaphragm 12 for compensation. The substrate 10 and a base 30 are joined together to displace the center part of the diaphragm 12 for compensation previously by constant delta through the operation of the projection part 12a based upon the initial step. |
