| 摘要 |
PURPOSE:To remove the influence of ambient temperature by calculating pressure to be measured which operates on a pressure receiving diaphragm on the basis of resistance values of gauge resistances provided to the pressure receiving diaphragm, a cantilever, and the fixation part of a single-crystal semiconductor substrate. CONSTITUTION:The pressure receiving diaphragm 11 is formed of a single-crystal semiconductor substrate 10 of silicon, etc., by anisotropic etching. Further, a cantilever 12 is formed of the substrate 10 by anisotropic etching. A slight initial step delta is provided between the tip part 12a of the cantilever 12 and a fixed part 13; and a gauge resistances 21 is formed on the surface of the pressure receiving diaphragm 11, a gauge resistance 22 on the surface of the cantilever 12, and a gauge resistance 23 on the surface of the fixation part 13. The substrate 10 is joined with a base 30 to displace the cantilever 12 by constant delta based upon the initial step. Further, an opening 31 for applying reference pressure PO to the reverse surface of the pressure receiving diaphragm 11 is formed in the base 30. |
