| 摘要 |
<p>An integrated circuit chip includes a layer of silicon nitride (4-20) deposited above the upper metallization and silicon oxide intermetallic dielectric (4-10), above which a layer of polyimide (4-50) supports a network of electrical leads; the layer of nitride (4-20) extending completely over the silicon oxide (4-10) from the streets (4-200) at the edge of the die to overlap metallic contacts (4-05) connected from the metallization layer to the upper electrical leads.</p> |
