A semiconductor memory device.

摘要

In a MOS-dRAM formed by integrating memory cells each formed of an MOS capacitor (2) and an MOSFET (1), a D-type transistor with a threshold voltage lower than that of MOSFETs of peripheral circuits is used for the MOSFET (1) of each memory cell. Thus, a word line driver without a pull-up circuit can be used, permitting high-speed access of the MOS-dRAM.