| 发明名称 |
METHOD FOR GROWING A LOW DEFECT MONOCRYSTALLINE LAYER ON A MASK |
| 摘要 |
An apertured mask layer is disposed on a substrate having a monocrystalline portion at a surface thereof. Essentially all edges of the mask apertures are parallel to a predetermined crystallographic direction. A monocrystalline layer is then deposited such that it grows within the mask apertures and over the mask in a direction perpendicular to the aperture edges. |
| 申请公布号 |
GB2116067(B) |
申请公布日期 |
1985.10.09 |
| 申请号 |
GB19830003792 |
申请日期 |
1983.02.11 |
| 申请人 |
* RCA CORPORATION |
发明人 |
JOSEPH THOMAS * MCGINN;LUBOMIR LEON * JASTRZEBSKI;JOHN FRANCIS * CORBOY |
| 分类号 |
H01L27/12;C30B25/18;H01L21/02;H01L21/20;H01L21/263;H01L21/86;(IPC1-7):C30B19/12 |
主分类号 |
H01L27/12 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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