| 摘要 |
PURPOSE:To evaluate a group III-V compound semiconductor easily by forming a film corresponding to the distribution of defects through a hot water oxidation method from the compound semiconductor such as GaAs. CONSTITUTION:The surface of a substrate to be inspected consisting of GaAs is washed by trichloroethylene, etc. first, and smears are removed. When the GaAs substrate is dipped in pure water heated at 100 deg.C for approximately 3hr, a film pattern is generated on the surface of GaAs. A wafer in which etch-pits are generated is oxidized in hot water in order to prove that said pattern is in correspondence to defects of the pattern. Accordingly, the thick formation of the white film in the vicinity of a lineage line viewed as the connection of the etch- pits of black points is determined. |
