| 摘要 |
PURPOSE:To increase the accumulated capacitance per projected area of a large- capacitance capacitor for an LSI by a method wherein a plurality of insulation films and electrodes are superposed on an Si substrate, the first insulation film, and the first electrode. CONSTITUTION:After an element isolation insulation film 22 is formed around the memory cell part of the Si substrate 21, a diffused layer 23 connected to the source or drain of a MOSFET, a groove C produced by dry etching, the first insulation film 24 produced by thermal oxidation, and the first tungsten W electrode 25 produced by CVD are successively formed. Next, a tantalum oxide film is formed as the second insulation film 26 by low-pressure CVD, and a contact hole (e) is opened by photo etching; thereafter, tungsten W is formed as the second electrode 27 by CVD. |
