| 摘要 |
PURPOSE:To enable to obtain a high OFF resistance by a method wherein a high resistance amorphous Si layer containing boron is provided in the semiconductor layer laminated on an insulated substrate. CONSTITUTION:A gate electrode 2 is formed on a glass substrate 1. Then, an insulating layer 3 is formed, and an N<-> amorphous Si layer 4, an amorphous Si layer 5 and an N<+> amorphous Si layer 6 are successively formed on the layer 3. Subsequently, an Mo layer to be turned to a source electrode 7 and a drain electrode 8 is formed, and electrodes 7, 8 and a layer 6 are formed by performing a dry etching in such a manner that the prescribed gate length and the gate width will be obtained, and a transistor constitution is completed. In this transistor constitution, boron of 0.1-1,000ppm is contained in the layers 4, 6, and a high resistance amorphous Si layer 5 having the resistance one figure larger than the resistivity of the layer 4 is provided. As a result, a sufficient resistance can be maintained even when the resistance of the layer 5 is reduced by one or two figures due to the dry etching, contamination and the like, thereby enabling to increase the OFF resistance of a thin film transistor in a stable manner. |
