| 摘要 |
PURPOSE:To obtain the stabilized polycrystalline Si having an unchanged resistance value when a heat treatment is performed by a method wherein the As atomic concentration in the polycrystalline Si is brought within the specific range of concentration. CONSTITUTION:An SiO2 film 32 is provided on an Si substrate 31, and a polycrystalline Si film of 1,000-3,000Angstrom in thickness is formed thereon. Then, As<+> is added to the polycrystalline Si film by performing an ion implanting method in such a manner that the atomic concentration of 2.3X10<20>cm<-3>-3.5X10<20>cm<-3> will be obtained. Subsequently, a resistor 33 is formed by selectively performing an etching on the film 32. Then, an SiO2 film 34 is formed, an aperture is selectively provided, and an Al electrode 35 is formed on the aperture part. As a result, an As-added polycrystalline Si resistor which is stable for heat treatment can be formed. |
