发明名称 |
Window structure semiconductor laser |
摘要 |
A window V-channeled substrate inner stripe semiconductor laser which includes window regions formed at both ends of a stimulated region. The stimulated region includes a crescent active layer, and each of the window regions includes a plane active layer for transferring the laser beam emitted from the stimulated region to the mirror. The window regions ensure a stable operation of the laser oscillation and a high optical power for catastrophic optical damage.
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申请公布号 |
US4546481(A) |
申请公布日期 |
1985.10.08 |
申请号 |
US19830476844 |
申请日期 |
1983.03.18 |
申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
YAMAMOTO, SABURO;HAYASHI, HIROSHI;YANO, SEIKI |
分类号 |
H01S5/16;H01S5/223;H01S5/24;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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