发明名称 |
Vertical IGFET with internal gate and method for making same |
摘要 |
A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.
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申请公布号 |
US4546375(A) |
申请公布日期 |
1985.10.08 |
申请号 |
US19820439563 |
申请日期 |
1982.11.05 |
申请人 |
RCA CORPORATION |
发明人 |
BLACKSTONE, SCOTT C.;JASTRZEBSKI, LUBOMIR L.;CORBOY, JR., JOHN F. |
分类号 |
H01L21/336;H01L29/423;H01L29/78;(IPC1-7):H01L27/12;H01L29/04;H01L27/02 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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