| 摘要 |
PURPOSE:To prevent the variation of characteristics due to the contamination of heavy metals by coating an silicon oxide film on an silicon substrate with a first silicon nitride film and coating the nitride film with a second silicon nitride film. CONSTITUTION:An silicon oxide film 2 is formed on an silicon semiconductor substrate 1 to which a large number of semiconductor elements are shaped. The surface of the film 2 is coated with a nitride film 3 through a decompression vapor-phase growth method, etc. The surface of the film 3 is coated with a nitride film 4 grown through another technique. A metal 5 for an electrodes is formed in a contact hole 6. The variation of characteristics due to the contamination of heavy metals can be prevented. |
