| 摘要 |
PURPOSE:To make gently the step differences at the intersecting part of wiring layers of three layers or more at a semiconductor device of multilayer wiring structure by a method wherein the edge of the first wiring layer and the edge of the second wiring layer are made as not to be superposed at the part in the width direction of the third wiring layer. CONSTITUTION:A second wiring layer 15 is formed crossing at right angles with a first wiring layer 12 on an Si substrate 11 interposing the first wiring layer 12 and a layer insulation film 13 between them. A third wiring layer 17 to cross at right angles with the layer 15, and to pass on the layer 12 is formed interposing a layer insulation film 16 between them. However, because a projected part 12b is formed in the length direction crossing the open hole part 14 of the film 13 at the tip edge part of the layer 12, the edge 12a of the tip of the layer 12 and the edge 15a of the side part of the layer 15 are not superposed at the part in the width direction of the layer 17. Accordingly, a step difference to be formed to the layer 17 is divided into two differences L1a, L1b, and the difference is made gently. By providing the projected part 12b in the length direction of the layer 12 at the tip edge part, size of the step difference formed to the layer 17 becomes to nearly the same with the case of two layer wirings. Therefore disconnection and a short at the step difference part are reduced extremely. |
