| 摘要 |
PURPOSE:To make high integration and acceleration of LSI feasible by a method wherein grooves are formed into a semiconductor substrate and after filling the grooves with organic solvent containing impurity or silicon dioxide, shallow impurity diffusion layer is formed on the bottom or sides of grooves by means of short time annealing process. CONSTITUTION:A gate film 14, a gate electrode 13 and a source.drain diffusion layer 12 formed by ion implantation are formed on an Si semiconductor substrate 11. After depositing an interlayer insulating film 15, contact holes are made for patterning photoresist 16 to form grooves in the hole regions. After coating the grooves and the photoresit 16 with organic solvent 17 containing impurity for diffusion to fill the contact holes and the grooves of semiconductor substrate, they are annealed for a short time using a halogen lamp. Further after removing the organic solvent 17 and the resist 16, an A wirings 19 are formed to fill the contact holes and the grooves of semiconductor substrate with Al. Through these procedures, a shallow diffusion layer may be formed on the bottom and side regions of grooves of Si semiconductor substrate in the contact hole regions while the grooves are filled with Al. |
