| 摘要 |
PURPOSE:To prevent increasing of wiring resistance at a through-hole part and disconnection, by a method wherein the buried through-hole is formed by the second metal. CONSTITUTION:The second metal 22 is sputter-deposited on the first wiring 21. Then, photoresist 23 is applied on that second metal 22. Subsequently, makes only the second metal remain at the specified part by etching the second metal 22 making a photoresist 23 as a mask. At this time, some kind of side etching are carried out and eaves 24 of the photoresist 23 are made. Successively, the end part of the photoresist 23 are exposed by etching after an insulation film 25 is formed all the surface. After that, when insulation film 25 on the second metal is removed by the lift-off method, the second metal 22 remains only at the part on which the through-hole is formed, and the construction with flat surface on which the buried through-hole is formed, can be obtained. |
