| 摘要 |
PURPOSE:To improve the precision of pattern drawing image while not lowering productivity by a method wherein the peripheral part of pattern is not irradiated until the effect of preceding shot is attenuated at specified time interval while any part other than the peripheral part of pattern is irradiated at specified time interval shorter than said time interval. CONSTITUTION:Within the electron beam exposure irradiating specified pattern by electron beam, a pattern 2 can not be exposed at one time due to the structure of device therefore the pattern 2 is irradiated by means of irradiating all of small patterns 3 starting from point (a) to point (c) through point (b) and vice versa one by one. The peripheral parts are irradiated only after the effect of preceding shot is attenuated since the important factor of precision of pattern 2 is the precision of peripheral parts 2a, 2b, 2c and 2d. However, the precision of pattern need not be taken into consideration at the central part of pattern to be exposed to the extent wherein resist may be left within allowable range. |
