| 摘要 |
PURPOSE:To improve sensitivity and various characteristics by printing semiconductor paste formed by mixing the powder of a III group metal or a III-V group compound to the powder of a compound semiconductor, which consists of In and Sb or mainly comprises InSb, onto a substrate to a predetermined shape. CONSTITUTION:An InSb piece having high purity is crushed to grain size of 5mum or less, and In powder is added at a fixed ratio and pulverized and mixed. An organic binder is mixed and kneaded to the mixed powder to a pasty state, and printed onto an alumina substrate in the form of a Hall element as printing paste. InSb extends over 80.0-99.5wt% and In 0.5-20.0wt% in the compounding ratio of InSb and In. Since paste can be sintered at a low temperature of the melting point or lower by a binder effect of mixed In, Ga, etc., a film having large strength can be obtained as the flatness and uniformity of the film are kept as they are. Sensitivity is improved and resistance is increased, and an element can be miniaturized. |
