| 摘要 |
PURPOSE:To improve the high speed operation limit in a hook type PCD shift register by detecting a variation in the potential of a substrate due to conduction of one unit as a variation in a gate threshold voltage in the adjacent unit element. CONSTITUTION:A unit element is made of transistors 13, 14 of first and second types. Shift pulse voltages phi1, phi4 are positive, phi2, phi3 are negative, and when positive start pulse voltage Vs is applied to an electrode 15, a transistor T2(14) is turned ON by the implanted carrier, and a transistor T1(13) is further turned ON. Part of holes generated between the transistors 13 and 14 is attracted to the transistor T3, which becomes ready conductive. When the shift pulse is inverted, the holes at the periphery of the T2 are electrically repelled, attracted to the transistor T4, which is turned ON, the T3 is simultaneously turned ON, and the ON state is shifted from between T1 and T2 to between T3 and T4. The ON state of unit elements are removed by electrodes 8. |
