| 摘要 |
PURPOSE:To improve the manufacturing yield by forming a conductive type different from that of an isolation region of a shortcircuit preventive region on the isolation region made of one conductive type at the peripheral edge of a chip, thereby reducing the occurrence of a shortcircuit. CONSTITUTION:A shortcircuit preventive region 11 is disposed and formed in parallel along the peripheral edge of a chip 2. The region 11 is formed under a wire 1, has an n<+> type buried diffused region 12 of a lower layer and n<-> type epitaxial layer 13 of upper layer, and disposed at the prescribed interval along the peripheral edge of a p<+> type isolation region 6. An interval between the region 11 and the adjacent region 11 may be an interval sufficient to form an n-p- n junction such as, for example, several mum. The peripheral edge length of the chip 2 of the region 11 is disposed intermittently so that the same regions 11 are not contracted even if adjacent wirings are simultaneously suspended. |
