| 摘要 |
PURPOSE:To ultrafinely form a switching array for driving a display device substrate of large area by a self-aligning method by exposing and patterning a resist from the back surface of a substrate with a gate electrode pattern as a mask, and forming source and drain electrodes of N<+> a-Si layer coating. CONSTITUTION:An NiCr gate electrode pattern 2 and a gate insulating film 3 are formed on a substrate 1. A positive resist 13 is coated, with a gate electrode pattern 2 as a mask it is exposed from the back surface of a substrate, and developed. A thin metal film 16 such as NiCr and N<+> type a-Si film 17 are coated. A resist 13 is removed by a lift-off method to separate a source electrode 6 and a drain electrode 7. An a-Si layer 4 is formed, and patterned. A thin film transistor is formed by a self-aligning method, and switching elements of a matrix array highly precisely formed with high reliability can be formed on a large size device substrate. |
