| 摘要 |
PURPOSE:To control a threshold value with good reproducibility by forming a gate electrode, a source electrode and a drain electrode and then annealing them, thereby activating impurity ions of the channel region, source region and the drain region while monitoring the threshold voltage. CONSTITUTION:An ion implantation for forming a channel region in a GaAs semi-insulating substrate 1 is performed, a heat treatment is executed to form an N type layer 3. A gate electrode 4 of an SiX film is formed. To form source and drain regions, with the electrode 4 as a mask high density ions are implanted. Source and drain electrodes 6, 7 of WSi2 film are formed. An aluminum nitride film 8 is formed as a protective film, a high density ion implanted region is activated by flash annealing to form source and drain regions 9, 10. Since the electrodes 9, 10 are formed, the threshold is controlled readily by regulating the conditions of annealing while observing the threshold value. |
