| 摘要 |
PURPOSE:To obtain a CCD output of low noise and high sensitivity by constructing a gate electrode of a P-channel vertical junction gate field effect transistor (P-VJFET) at the output region of an N type bulk channel CCD. CONSTITUTION:An N type bulk chaneel region 2 is formed on a P type substrate 1, and transfer electrodes 13, 14 of CCD are formed through an insulating film 12. The hole region 5 of an N type output region 3 extended in the region 2 becomes the channel region of a P-VJFET. A p type surface region 4 and a P type drain region 8 are formed. The region 3 is connected through a channel region 6B under set gate electrode 6 with an N<+> drain region 7. The region 4 is connected through a load NMOST9 to a shallow power source VDL, and connected with the gate of the second stage buffer layer source follower NMOST11. The drain of the NMOST11 is connected with deep power source VDH, and the source is connected through the channel of the load NMOST10 with the shallow power source VDL. The NMOSTs 9, 10, 11 are formed on the region 2. |
