| 摘要 |
PURPOSE:To obtain the titled element of high withstand voltage, high reliability, and high manufacturing yield by a method wherein the probability of deposition of foreign matters is reduced by shortening the length of a P-N junction exposed to the peripheral surface of the element, and the generation of short-circuit is prevented by positioning the rim of an electrode inside that of an insulation film. CONSTITUTION:A mesa part 18 is formed by removing the part of a buried layer distant from an active layer, i.e. the part between an active layer 3 and an active layer 3 by the photolithography technique. Next, an insulation film 10 made of SiO2 or the like is partly formed on the main surface of a wafer 15, and the P-N junction end posed to the side surface is covered with this insulation film 10. Then, outer force is applied to one end of the wafer 15 by means of a diamond tool or the like, and cleavage is carried out after scratching for cleavage at fixed intervals along the cleavage plane of the crystal; accordingly, segments on strips are formed. This segment gets scratches in a scribing area at fixed intervals in the direction orthogonal to cleavage lines by means of a diamond tool or the like, and cut along the scribes by cracking, resulting in the formation of many laser chips 19. |
