PROCESS FOR OBTAINING A LAYER WITH PLANE HOMOGENEOUS MAGNETIZATION IN A FERRIMAGNETIC GARNET

摘要

The invention relates to a process making it possible to obtain at least one homogeneous planar magnetization layer in a material constituted by a ferrimagnetic garnet film epitaxied on an amagnetic substrate. According to this process, at least one implantation of ions, with the exception of ions of gaseous elements and those of metallic elements occurring in the composition of the solvent is performed in the film at a high dose. The film and substrate are annealed in order to recrystallize in monocrystalline form that part of the film made amorphous by implantation. Application to the production of magnetic bubble memories.