发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To attain high IC-implementation nd to reduce the power consumption by using a current mirror mode MOSFET as a load means provided for a logical block. CONSTITUTION:A current mirror circuit is so composed of P channel MOSFETs Q1, Q3, and Q4 that the current generated by the MOSFETQ1 flows to the MOSFETs Q3 and Q4 at the size ratio of the MOSFETs Q3 and Q4. Then, N channel drive MOSFETs Q5 and Q6 which receive input signals (a) and (b) are provided in parallel to constitute an NOR gate circuit NOR1 when positive logic which regards a high level like a current voltage VDD as a logical level ''1''.
申请公布号 JPS60194616(A) 申请公布日期 1985.10.03
申请号 JP19840049058 申请日期 1984.03.16
申请人 HITACHI SEISAKUSHO KK 发明人 YOSHIDA SHINICHI;MASUDA KENZOU
分类号 H03K19/00;H03K19/0944;H03K19/173 主分类号 H03K19/00
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