| 摘要 |
PURPOSE:To make single crystal formation possible, inheriting crystallizability of a seed region by melting a non single crystal Si film with both of a strip heater and a beam of laser of electrons. CONSTITUTION:An insulator film 3 is formed on a silicon substrate 1 except a part which corresponds to the seen region 2 of the substrate and is subsequently removed by etching for crystal growth. A polycrystalline silicon layer 4 is formed on the substrate 1 thus treated, and is melted for single crystal formation by a method wherein a carbon strip heater 5 is used for the layer 4 above the seed region 2, and a beam 6 of laser or electrons for that above the layer 3. After, however, melting with such beam is started, the temperature of the strip heater 5 is lowered and the single crystal oriented on the seed region 2 is developed. |
